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Ge single crystal solar cell substrate

High‐Efficiency Solar Cells Grown on Spalled Germanium for Substrate

Here, we describe single-junction GaInAs solar cell devices grown by organometallic vapor phase epitaxy (OMVPE) directly on spalled Ge (hereafter referred to as

Flexible GaAs solar cells on roll-to-roll processed epitaxial Ge

costs originates from the expensive Ge and GaAs single-crystal wafers, which are used as substrates to epitaxially grow the III-V PV devices. To address this, epitaxial lift-off (ELO) and

GaAs Solar Cells Grown on Unpolished, Spalled Ge Substrates:

N2 - Decreasing the cost of single-crystal substrates by wafer reuse techniques has long been sought for III-V solar cells. Controlled spalling of III-V devices is a possible pathway for

(PDF) Overview of Engineered Germanium Substrate

These results demonstrate a CMP-free, reliable Ge substrate reconditioning process, paving the way towards substrate multi-reuse and consequent devices'' weight and

Germanium-on-Nothing for Epitaxial Liftoff of GaAs Solar Cells

sent an ultrathin epitaxially ready single-crystal Ge membrane, formed by germanium-on-nothing(GON)technology,whichemploysmorphologicalevolu- transfer of thin III-V solar cells

Hybrid III-V/SiGe solar cells grown on Si substrates

In the search for a hybrid III-V/Si photovoltaic technology, a tandem GaAsP/SiGe solar cell grown on silicon substrate have been developed using SiGe/Ge reverse graded buffers.

GaAs Solar Cells Grown on Unpolished, Spalled Ge Substrates

demonstrated single-junction GaAs solar cell efficiencies > 25% [4]. However, the cost of the single-crystal substrate used for device growth remains very high. One possible path to reduce

Ultrathin Flexible Ge Solar Cells for Lattice‐Matched Thin‐Film

Ultrathin Ge single-junction (1J) solar cells transferred onto a flexible substrate are envisioned to open up a novel lattice-matched thin-film InGaP/(In)GaAs/Ge tandem solar

Ultrathin Flexible Ge Solar Cells for Lattice‐Matched

Ultrathin Ge single-junction (1J) solar cells transferred onto a flexible substrate are envisioned to open up a novel lattice-matched thin-film InGaP/(In)GaAs/Ge tandem solar cell for enabling highly efficient, low-cost,

GaAs Solar Cells Grown on Unpolished, Spalled Ge Substrates

efficient single-junction device, without anti-reflection coating, grown on a spalled surface containing arrest lines. The quantum efficiency of this device is similar to devices grown on

GaAs Photovoltaics on Polycrystalline Ge Substrates

High efficiency III-V multijunction solar cells deposited on metal foil or even polymer substrates can provide tremendous advantages in mass and stowage, particularly for planetary missions.

(PDF) Highly efficient single-junction GaAs thin-film solar cell

Ultra‐thin Ge single‐junction (1J) solar cells transferred onto a flexible substrate are envisioned to open up a novel lattice‐matched thin‐film InGaP/(In)GaAs/Ge tandem solar

Growth of Ge-rich SixGe1−x single crystal with uniform

An improved growth technology was developed to grow Ge-rich SiGe crystals on Ge seeds on the basis of the Multi-component zone melting method. The purpose of growing

Germanium-on-Nothing for Epitaxial Liftoff of GaAs

Here, we present an ultrathin epitaxially ready single-crystal Ge membrane, formed by germanium-on-nothing (GON) technology, which employs morphological evolution of an arrayed porous Ge during hydrogen annealing.

High‐Efficiency Solar Cells Grown on Spalled

Here, we describe single-junction GaInAs solar cell devices grown by organometallic vapor phase epitaxy (OMVPE) directly on spalled Ge (hereafter referred to as "sp-Ge") substrates that undergo minimal surface

Single crystal and amorphous Ge for use in stand-alone and thin

In this paper, we consider the use of crystalline Ge as bottom cell and substrate for growth of high efficiency II-VI multijunction solar cells and amorphous Ge for application in thin film II-VI

SiGe bulk crystal as a lattice-matched substrate to GaAs for solar cell

an alternative substrate to Ge for realization of exactly lattice-matched GaAs/SiGe solar cells. The SiGe substrates were fabricated by the multicompo-nent zone-melting method developed by

Metal Insulator Semiconductor Solar Cells Based on

2021. Silicon Germanium (SiGe) solar cells with different bandgaps are used in the fabrication of the crystalline-Si/SiGe (c-Si/SiGe) double-junction cell in order to enhance the performance of the c-Si single devices.

Realization and characterization of thin single crystal Ge films on

We have successfully produced and characterized thin single crystal Ge films on sapphire substrates (GeOS). Such a GeOS template offers a cost-effective alternative to bulk

Germanium-on-Nothing for Epitaxial Liftoff of GaAs Solar Cells

Here, we present an ultrathin epitaxially ready single-crystal Ge membrane, formed by germanium-on-nothing (GON) technology, which employs morphological evolution

Single crystal and amorphous Ge for use in stand-alone and thin

Thin film and single crystal germanium solar cells are of interest for use in low cost thermophotovoltaics [1,2] and in multijunction solar cells. Single crystal Ge substrates have

Realization and characterization of thin single crystal Ge films

We have successfully produced and characterized thin single crystal Ge films on sapphire substrates (GeOS). Such a GeOS template offers a cost-effective alternative to bulk

Solar Energy Materials and Solar Cells

These losses are intrinsic to the substrate quality and the epitaxy used as well as to the contribution of the upper and lower surfaces. In this paper, we have fabricated

[PDF] Single‐junction InGaP/GaAs solar cells grown on Si substrates

Single junction InGaP/GaAs solar cells displaying high efficiency and record high open‐circuit voltage values have been grown by metal–organic chemical vapor deposition on

Ge single crystal solar cell substrate [PDF]

6 FAQs about [Ge single crystal solar cell substrate]

Can a single-junction solar cell be grown directly on a spalled Ge substrate?

Here, we describe single-junction GaInAs solar cell devices grown by organometallic vapor phase epitaxy (OMVPE) directly on spalled Ge (hereafter referred to as “sp-Ge”) substrates that undergo minimal surface processing, but no CMP, before growth.

What is the difference between GaAs and Ge substrates?

Ge substrates are commonly used instead of GaAs substrates for growth of III–V multijunction solar cells used for space applications. Controlled spalling of (100)-oriented Ge solves several issues associated with GaAs spalling, offering both alignment between a preferred growth orientation and an available cleavage system.

Which substrate is used for III–V multijunction solar cells?

However, (110) is not a common growth orientation for III–V photovoltaics, and it is difficult to maintain a smooth epitaxial growth front. Ge substrates are commonly used instead of GaAs substrates for growth of III–V multijunction solar cells used for space applications.

How efficient are single-junction solar cells on SP-GE?

We demonstrate a 23.4% efficient single-junction solar cell on sp-Ge under conditions where no spalling defects are present and without the use of a CMP step. These best devices are within 2% relative of nominally identical devices grown on commercial epi-ready Ge (hereafter referred to as “epi-Ge”) substrates.

What is an epitaxially ready single-crystal GE membrane?

Here, we present an ultrathin single-crystal Ge membrane formed by germanium-on-nothing (GON) technology which employs morphological evolution of an arrayed porous Ge during hydrogen annealing.

How are solar cell structures deposited?

Solar cell structures were deposited on both commercial, epi-ready Ge wafers and the wafers that resulted from the controlled spalls on full 50.8 mm-diameter wafers. The Ge substrates were heated to 700 °C under hydrogen and held for 10 min for in situ oxide desorption.

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